MSE PRO Graphene Field-Effect Transistors (GFETs) for Sensing Applications, Die Size 4mm x 4mm
SKU: 1234
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MSE PRO Graphene Field-Effect Transistors (GFETs) for Sensing Applications, Die Size 4mm x 4mm
SKU: ME0645
MSE PRO™ Graphene Field-Effect Transistors GFET (Die size 4 mm x 4 mm) for Sensing Applications
The ME0645 GFET 4x4 chip is designed for sensing applications, and it is compatible with measurements in a liquid medium. The metal pads are passivated to avoid degradation and reduce leakage currents. It also includes a non-encapsulated electrode at the center of the chip, which allows for liquid gating without the need of an external gate electrode (such as Ag/AgCl probes). This device architecture enhances signal-to-noise ratio and reduces parasitics.
Graphene Oxide FET chip is also available at MSE Supplies.
SKU#: ME0645
Measurement Protocols and Handling Instructions
FEATURES
- State-of-the-art GFETs utilizing high-quality graphene
- Semiencapsulated geometry + central gate electrode for measurements in liquid environments
- Packaged die for easy integration into readout schemes
- 7x one-channel + 7x three-channel devices per chip
- Mobilities typically in excess of 1000 cm2/V.s
- Processed in ISO 7 Clean Room
APPLICATIONS
- Graphene device research
- Chemical/gas sensing
- Biological sensors (biosensors)
- Bioelectronics
- Healthcare
- Industrial safety
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TYPICAL SPECIFICATIONS |
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Die dimensions |
4 mm x 4 mm |
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Chip thickness |
525 μm |
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Gate Oxide thickness |
90 nm |
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Gate Oxide material |
SiO2 |
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Resistivity of substrate |
1-10 Ω.cm |
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Metallization |
Gold-based Contacts 50 nm |
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Graphene field-effect mobility |
> 1000 cm2/V.s |
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Dirac point (liquid gating) |
< 1.5 V |
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Yield |
> 75 % |
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ABSOLUTE MAXIMUM RATINGS |
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Maximum gate-source voltage |
± 1.5 V |
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Maximum temperature rating |
150 °C |
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Maximum drain-source current density |
107 A.cm-2 |
References:
W. Fu, L. Jiang, E.P. van Geest, L.M.C. Lima, G.F. Schneider Sensing at the Surface of Graphene Field‐Effect Transistors. Advanced Materials Vol 29(6), 2017.
J. Ping, R. Vishnubhotla, A. Vrudhula, and A.T.C. Johnson Scalable Production of High-Sensitivity, Label-Free DNA Biosensors Based on Back-Gated Graphene Field Effect Transistors. ACS Nano Vol 10(9), 2016.