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MSE PRO 4 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates (Dummy Grade)
SKU: WA0367
MSE PRO™ 4 inch diameter Silicon Carbide (SiC) Crystal Substrate, 4H/6H P-type SiC Wafers (Dummy Grade)
MSE Supplies offers 4 inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate is generally used for manufacturing power devices, especially the manufacturing of Insulated Gate Bipolar Transistors (IGBT). The design of IGBT often involves P-N junctions, where P-type SiC can be advantageous for controlling the behavior of the devices.
Specification:
| Grade | Dummy Grade | |
|
Diameter |
100.0 mm +/- 0.5 mm |
|
|
Thickness |
350 um +/- 25 um |
|
|
Wafer Orientation |
Off axis: 2.0°~4.0° toward <11-20> ±0.5° |
|
| Roughness |
Optical Polish Ra≤1 nm on the C face CMP Ra≤0.2 nm on the Si face |
|
| Polytype (Dummy Grade) | 4H (WA0367) ; 6H (WA0368) | |
|
Micropipe Density (MPD) |
<0.5 cm-2 |
<0.5 cm-2 |
| Electrical Resistivity (Ohm.cm) | 0.07~0.12 | 0.12~0.3 |
| Dopant | Aluminum (Al) | |
* Please contact us for detail specification.
**For production grade, please contact us for availability.
PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
|
Property |
4H-SiC Single Crystal |
6H-SiC Single Crystal |
|
Lattice Parameters (Å) |
a=3.076 c=10.053 |
a=3.073 c=15.117 |
|
Stacking Sequence |
ABCB |
ABCACB |
|
Density (g/cm³) |
3.21 |
3.21 |
|
Mohs Hardness |
~9.2 |
~9.2 |
|
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
4-5 x10-6 |
|
Refraction Index @750nm |
no = 2.61 ne = 2.66 |
no = 2.60 ne = 2.65 |
|
Dielectric Constant |
c ~ 9.66 |
c ~ 9.66 |
|
Doping Type |
N-type or Semi-insulating or P-type |
N-type or Semi-insulating or P-type |
|
Band-gap (eV) |
3.23 |
3.02 |
|
Break-Down Electrical Field (V/cm) |
3-5 x 106 |
3-5 x 106 |
|
Saturation Drift Velocity (m/s) |
2.0 x 105 |
2.0 x 105 |
|
Wafer and Substrate Sizes |
Wafers: 2, 4 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request |
|
Price
MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.