MSE PRO 100 mm N Type (P-doped) Prime Grade Silicon Wafer <100>, SSP, 1-10 ohm-cm - MSE Supplies LLC

MSE PRO 4 inch Silicon-on-Insulator (SOI) Wafer (Device: 8μm; Box: 1μm)

SKU: WA2603

£405⁰⁰
Save £82⁰⁰

MSE PRO™ 4 inch Silicon-on-Insulator (SOI) Wafer (Device: 8μm; Box: 1μm)

Silicon-on-Insulator (SOI) wafer is a structure including the device layer (top), buried oxide layer (middle), and handle wafer (bottom). This technology allows for the continuous miniaturization of microelectronic devices. It has several advantages over a traditional silicon wafer, like low leakage currents and parasitic capacitance. It is used in various applications, including MEMS, sensors, telecommunications, and power devices. For example, the researchers at Toyota Central R&D Labs proposed simple T-shaped support as a solution to the tilt deformation caused by the residual stress. This solution could potentially allow for the development of high-precision sensors and actuators.

Types of SOI Wafers:

SIMOX: Device Layer Thickness < 250nm

BESOI: Device Layer Thickness between 1 μm ~ 300μm

SIMBOND: Device Layer Thickness < 200nm

Smart-Cut: Device Layer Thickness < 1.5μm

Specification:

Parameter	Specification Range
Diameter	100 ± 0.2 mm
Handle Wafer
Thickness	390 ± 5 µm
Orientation	(100) ± 1 deg
Type	P / Any
Resistivity	0.01-0.02 ohm.cm
Backside	Polished with oxide and lasermark
Box Layer
Thickness	10000 ± 1000 Å
Device Layer
Thickness	8 ± 1 µm
Type/Dopant	P / Boron
Orientation	(100) ± 0.5 deg
Resistivity	0.001-0.002 ohm.cm
Quantity	1 piece