Specification:
General Wafer | |
Structure | LiTaO3 / Oxide / Si |
Diameter | Φ100 ± 0.2 mm |
Thickness | 525 ± 20 μm |
Primary Flat Length | 32.5 ± 2 mm |
Wafer Beveling | R Type |
TTV | < 10 μm |
LTV | < 1.5 μm (5∗5 mm2) / 95% |
Bow | ± 50 μm |
Warp | < 50 μm |
Edge Exclusion | 5 mm |
Edge Trimming | 2 ± 0.5 mm |
Lithium Tantalate Layer | |
Average Thickness | 600 ± 20 nm |
Orientation | X axis ± 0.3° |
Primary Flat | Perpendicular to +Z Axis ± 1° |
Front Surface Roughness (Ra) | < 0.5 nm |
Defects |
Within 150 total |
Isolation SiO2 Layer | |
Thickness | 4700 ± 100 nm |
Uniformity | <100nm @17 points |
Substrate | |
Material | Si |
Resistivity | > 10 kΩ·cm |
Orientation | <100> ± 1° |
Primary Flat Orientation | <110> ± 1° |
Backside | Etched |