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SKU: 1234
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1 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate
1 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate
1" JGS2 Fused Silica Wafer, 500 um Thick, DSP, w/ Bevel, No Flat
1.5 inch Ammonothermal Semi-insulating Free-Standing Gallium Nitride (GaN) Substrate
100 mm Corning 7980 High Purity Fused Silica (HPFS) Wafer, 500 um Thick, DSP, w/ Bevel, Primary Flat Only
100 mm JGS1 Ultraviolet (UV) Grade Fused Silica Wafer, 500 um, DSP, w/ Bevel, Primary Flat Only
100 mm JGS2 Fused Silica Wafer, 500 um Thick, DSP, w/ Bevel, Primary Flat Only
100mm Corning EAGLE XG Slim Glass substrates, 0.7mm Thick, DSP, w/ Bevel, No Flat
150mm Corning EAGLE XG Slim Glass substrates, 1.1mm Thick, DSP, w/ Bevel, No Flat
2 in Silicon Carbide Wafers 4H N-type or Semi-Insulating SiC Substrates
2 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate
2 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate
2" Corning ULE (Ultra Low Expansion Glass) 7972 Wafer, 0.35mm Thickness, DSP, No Flat
2" JGS1 Ultraviolet (UV) Grade Fused Silica Wafer, 500 um, DSP, w/ Bevel, Primary Flat Only
2" JGS2 Fused Silica Wafer, 500 um Thick, DSP, w/ Bevel, Primary Flat Only
3" JGS2 Fused Silica Wafer, 500 um Thick, DSP, w/ Bevel, Primary Flat Only
3" Schott Borofloat 33 Glass Wafer, 500 um Thick, DSP, w/ Bevel, Primary Flat Only
4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade
4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade
4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates