1 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate
1 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate
1.5 inch Ammonothermal Semi-insulating Free-Standing Gallium Nitride (GaN) Substrate
2 in Silicon Carbide Wafers 4H N-type or Semi-Insulating SiC Substrates
2 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate
2 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate
4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade
4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade
4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates
4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)
4" Silicon/Silicon Dioxide (Si/SiO2) Dry Thermal Oxide Silicon Wafer, Prime Grade
5 x 10 mm, A plane (11-20) Fe-doped semi-insulating, non-polar, free-standing Gallium Nitride (GaN)
5 x 10 mm, M plane (1-100) Fe-doped semi-insulating, non-polar, free-standing Gallium Nitride (GaN)
6 in Silicon Carbide 4H-SiC N-Type SiC Ingot
6 in Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating
6 inch N-type SiC Epitaxial Wafers on SiC Substrates
8 inch Silicon Carbide Wafers 4H-SiC N-Type
Boron Carbide Powder
Cadmium Zinc Telluride (CdZnTe/CZT) Wafer